| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to increase capacitance and to prevent collapse of pattern by enhancing the surface area using an island-type polysilicon layer without using additional processing. CONSTITUTION: An interlayer dielectric(32) with a contact plug(34) is formed on a substrate(30). A capacitor oxide layer is formed on the resultant structure. A contact hole is formed to expose the contact plug by selectively etching the capacitor oxide layer. An island-shaped polysilicon layer is formed on the resultant structure. A titanium film is formed on the resultant structure. A storage node electrode(42) is formed by removing the capacitor oxide layer together with the polysilicon layer and the Ti film.
|
