METHOD FOR FORMING MAGNESIUM DIBORATE THIN FILM USING ATOMIC LAYER DEPOSITION

摘要

PURPOSE: A method for forming a MgB2 is provided to increase the size and to improve productivity by using ALD(Atomic Layer Deposition). CONSTITUTION: A Mg(thd)2 molecule is adsorbed on a silicon substrate(100) by applying Mg(thd)2 as a magnesium source. A residual magnesium source is removed by purging. By applying B2H6 as a boron source to the resultant structure, a MgB2 thin film is formed on the silicon substrate by exchange reaction. A residual B2H6 and a reaction particle are removed by purging.