| 摘要 |
PURPOSE: A method for manufacturing a capacitor is provided to be capable of preventing oxidation of a lower electrode and degradation of a lower metal line. CONSTITUTION: A lower electrode(14) made of metal is formed on a silicon substrate(11) with a storage node contact plug(13). A composite dielectric film is formed by stacking sequentially a silicon nitride layer(15) and a silicon oxide layer(16) on the lower electrode using laser CVD(Chemical Vapor Deposition). An upper electrode(17) is then formed on the composite dielectric film.
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