SEMICONDUCTOR DEVICE FOR PREVENTING EXPOSURE OF METAL LINE FOR FUSE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent the exposure of a metal line for a fuse by improving the etching rate of TiN and reducing simultaneously the etching rate of an oxide layer using plasma processing with CF4 and O2 gas in an ashing process. CONSTITUTION: A semiconductor device(100) is divided into a pad region(110) and a fuse region(120). The pad region includes a lower metal line(112), a plug(113) and an upper metal line(114). The fuse region includes metal lines(122) for a fuse. An oxide layer(140) and a nitride layer(150) are sequentially formed on the resultant structure. The pad region is exposed by etching selectively the nitride layer and the oxide layer using a predetermined photoresist pattern(160). At this time, the oxide layer exists on the fuse region. Ashing is performed on the resultant structure by using O2 gas of 12000 sccm. CF4 gas of 200-600 sccm is added to the O2 gas.