| 摘要 |
PURPOSE: A method for compensating data of a flash memory device is provided, which reads or writes correct data even though a degradation phenomenon continues by changing a bias voltage value provided to a reference cell of the flash memory device. CONSTITUTION: According to the method, it is checked whether correct cell data is output within a fixed number(S400). If correct cell data is output within the fixed number, the method ends(S500), and otherwise, a voltage provided to a reference cell is changed(S420). After changing the voltage provided to the reference cell, it is checked whether correct cell data is output within the fixed number. If correct cell data is output within the fixed number, the changed bias voltage is memorized(S431) and the method ends, and otherwise it is determined to be a FAIL(S432) and the method ends(S500).
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