| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to prevent degradation of an interlayer dielectric by forming an oxide layer as a capping layer on the interlayer dielectric in strip processing using O2 plasma. CONSTITUTION: An interlayer dielectric(23) is formed on a substrate(20) with a lower interconnection(21). A via hole is formed by patterning the interlayer dielectric using the first photoresist pattern. The first photoresist pattern is removed by isotropic strip processing using O2 plasma, wherein the first capping layer(200a) is formed on the interlayer dielectric. An organic bottom ARC(Anti-Reflective Coating) layer and the second photoresist pattern are formed on the resultant structure. A trench is formed by etching the organic bottom ARC layer, the interlayer dielectric and the first capping layer using the second photoresist pattern. The second photoresist pattern is removed, wherein the second capping layer(200b) is simultaneously formed. Then, an upper metal interconnection(29) is formed in the dual damascene pattern.
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