| 摘要 |
PURPOSE: An immersion lithography method is provided, to improve the resolution by short wavelength and to reduce the pollution of wafer stage, lens surface and wafer back side. CONSTITUTION: The immersion lithography method comprises the steps of coating photoresist(12) on a target layer(10); coating an immersion layer(14) on the photoresist layer; exposing it; removing the immersion layer; and developing it to remain the photoresist selectively. Preferably the immersion layer is a mixture of organic materials or inorganic materials having a refractive index to the exposure light which is greater than 1 and is smaller than that of the photoresist. Preferably the immersion layer has a refractive index to the exposure light of 1.0-2.0. The immersion layer is spin coated with a rotation velocity of 500-5,000 rpm and with a thickness of 1-10,000 micrometers, and is removed by using deionized water or a tetramethyl ammonium hydroxide aqueous solution.
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