| 摘要 |
PURPOSE: A method for forming a diffusion barrier of a semiconductor device is provided to reduce defects of the diffusion barrier by using an atomic layer deposition method. CONSTITUTION: A lower structure(102) is formed on a semiconductor substrate(101). A first conductive layer(103) is formed on the entire surface of the semiconductor substrate including the lower structure by using an atomic layer deposition method. A second conductive layer(104) is formed on the entire surface of the first conductive layer by using the atomic layer deposition method. A diffusion barrier(110) as a laminated structure of the first and the second conductive layers is formed by using the atomic layer deposition method.
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