SOI SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: An SOI semiconductor device and a fabricating method thereof are provided to reduce a kink phenomenon and off-leakage current by using a conductive material instead of a gate spacer. CONSTITUTION: A buried oxide layer(2) is deposited on a silicon substrate(1). An active silicon layer(3) is formed on the buried oxide layer. A p-well region(4) is formed on a silicon region under the buried oxide layer by implanting p-type ions into the silicon substrate. An N-channel region(5) is formed by performing a channel threshold voltage ion implantation process. A gate oxide layer is formed on the N-channel region. A gate electrode(7) is formed by a patterning process. An N+ ion implantation process is performed to form an active region(8) for a source/drain region. A spacer(9) including an oxide layer and a nitride layer is formed to remove the silicon substrate and the buried oxide layer. A conductive spacer(10) is formed on a sidewall of the exposed gate electrode structure.