| 摘要 |
PURPOSE: A method for forming a conductive pattern of a semiconductor device is provided to be capable of preventing loss of a barrier layer, notch and necking of the conductive pattern. CONSTITUTION: The first insulating layer(38) is formed on a plug(37). A contact pad(40) is formed to connect the plug through the first insulating layer. The second insulating layer(41) for defining a bit line pattern region is formed on the contact pad. An opening part is formed to open the contact pad by selectively etching the second insulating layer. A conductive pattern(B/L) is then formed by filling a conductive layer(42) and a hard mask(43) in the opening part.
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