| 摘要 |
PURPOSE: A method for manufacturing a CMOS image sensor is provided to reduce dark current by using a spacer block mask for protecting the surface of a photodiode. CONSTITUTION: A field oxide layer(32) is formed on an epitaxial layer(31) to define an active region and a field region. Gate electrodes(33a,33b) of a transfer or reset transistor are formed on the epitaxial layer of the active region. A buried doping region(37) for a photodiode is formed in the epitaxial layer to align the gate electrode(33a) of the transfer transistor. An insulating layer(38) for a spacer is formed on the resultant structure. A spacer block mask is formed on the resultant structure to block the doping region, and then blanket etching is performed. The spacer block mask is removed.
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