METHOD FOR MANUFACTURING TFT

摘要

PURPOSE: A method for manufacturing a TFT(Thin Film Transistor) is provided to prevent the defects of crystal generating at the source/drain joint portion of a poly-Si TFT when performing a source/drain annealing process. CONSTITUTION: In order to recrystallize a silicon thin film of amorphous source/drain regions(17,18) and electrically activate the injected dopant, the second excimer laser annealing is performed. By the excimer laser annealing to the source/drain, the source/drain regions are polycrystalline silicon thin films which are doped with high concentration as n-type or p-type. In off state, it blocks the injection of minor carrier and in on state, supplies majority carriers and acts as a conductor for connecting the channel of the TFT with a metal wire.