GAP-FILLING METHOD FOR METAL LINE IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A gap-filling method for a metal line in semiconductor device is provided to reduce permittivity, to improve RC-delay property and to sustain a desired mechanical intensity by forming artificially voids between metal lines using a PECVD(Plasma Enhanced Chemical Vapor Deposition) for an IMD(InterMetal Dielectric). CONSTITUTION: A plurality of metal lines are formed on a semiconductor substrate(102). An HDP(High Density Plasma) oxide layer(108) is formed along an upper surface of the semiconductor substrate. The HDP oxide layer is selectively etched for remaining at sidewalls of each metal line. An IMD(110) with voids(112) is formed between the metal lines by using a PECVD.