METHOD FOR FORMING TITANIUM SILICIDE CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a titanium silicide contact of a semiconductor device is provided to minimize losses of silicon by using ALD(Atomic Layer Deposition). CONSTITUTION: An interlayer dielectric(22) is formed on a silicon substrate(21). A contact hole is formed by selectively etching the interlayer dielectric. A titanium silicide layer is then formed on the exposed substrate by ALD using a TiCl4 source(24a) and a silicon-containing gas(24b). A metal barrier layer is formed on the titanium silicide layer. A contact plug is then filled in the contact hole.