| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided to reduce contact resistance by performing salicide processing after increasing micro morphology of silicon in a source/drain region. CONSTITUTION: A transistor including a gate(13) and a source/drain region(14) is formed on a silicon substrate(11). A buffer oxide layer and an HSG(Hemi-Spherical Grain) silicon layer are formed on the resultant structure. The substrate and the gate are selectively etched using the HSG silicon layer and the buffer oxide layer. The HSG silicon layer is removed. A salicide layer(18) is formed on the gate and the source/drain region. A BLC(Borderless Contact) insulating layer(19) and an interlayer dielectric(20) are formed on the resultant structure. A plug(21) is then formed by selectively etching the interlayer dielectric and the BLC insulating layer.
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