METHOD FOR MANUFACTURING THIN FILM TRANSISTOR OF LIQUID CRYSTAL DISPLAY

摘要

PURPOSE: A method for manufacturing a TFT(Thin Film Transistor) of an LCD(Liquid Crystal Display) is provided to use a metal mask so that a photolithograph process is be required, thereby capable of forming a device safely. CONSTITUTION: A high concentration p-type impurity region(33a) is formed at a semiconductor layer(33) by injecting high concentration p-type ions through a metal mask(36) for covering the entire surface of an n-type device region and opening a p-type device region. At this time, the metal mask(36) is patterned adaptively to the n-type device region. Since the width of the opened p-type device forming region is larger than that of the semiconductor layer(33), although after blocking the n-type device forming region by the metal mask(36) with 10 micrometer resolution, a p-type ion injection process is performed, a fully high concentration p-type impurity region(33a) is defined.