METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve retention property by forming a spacer at both sidewalls of a gate electrode using an HTO(High Temperature Oxide) layer and by RTA(Rapid Thermal Annealing) under oxygen atmosphere. CONSTITUTION: A stacked gate electrode is formed on a semiconductor substrate(100). A spacer(114) made of an HTO layer using DCS(Dichlorosilane)(SiH2Cl2) is formed at both sidewalls of the gate electrode. RTA is then performed under oxygen atmosphere for segregation hydrogen in the spacer into the surface of the spacer.