| 摘要 |
PURPOSE: An ESD(ElectroStatic Discharge) protection circuit is provided to lessen field convergence by forming a buffer region adjacent to a field oxide of a bipolar transistor. CONSTITUTION: An ESD protection circuit includes a P type substrate(30), a field oxide(32), N+ diffusion layers(36,38), and a buffer region(34). The field oxide is formed on the substrate. The N+ diffusion layers are formed in the substrate to align the field oxide. The N+ diffusion layers are used as a source and drain. The buffer region is formed between the field oxide and the N+ diffusion layer to lessen field convergence. The buffer region is made of an N-diffusion layer.
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