| 摘要 |
PURPOSE: A quartz melting pot of a silicon single-crystal growth system is provided to prevent the contamination of silicon solution, restrict generation of pieces of cristobalite, and lower the density of oxygen by processing a surface of the quartz melting pot. CONSTITUTION: Cristobalite powders(c) are uniformly coated on a surface of a quartz melting pot of a silicon single-crystal growth system. In the coating the cristobalite powders, the cristobalite powders are mixed with alcohol and the mixture of the cristobalite powders and the alcohol is coated on the surface of the quartz melting pot. The alcohol is formed with methanol. A volume ratio of the cristobalite powders mixed with the alcohol or the methanol is 20 to 90 percent.
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