| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to increase the capacitance and reduce a storage node contact resistance by preventing oxidation of a surface of a storage node contact plug. CONSTITUTION: A first interlayer dielectric(110) including a contact plug is formed on a semiconductor substrate(102). A sacrificial oxide layer is formed on a peripheral region of the first interlayer dielectric. A dielectric layer(120) is formed on the entire surface of the semiconductor substrate. An upper electrode(122) is deposited on the dielectric layer. A second interlayer dielectric(114) is performed to bury a gap of the sacrificial layer. A surface of the sacrificial oxide layer is exposed by performing a planarization process. The sacrificial oxide layer is removed therefrom. A lower electrode(126) is formed thereon.
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