| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent damage of a liner nitride layer by performing etch processes using slurries having different etch ratios. CONSTITUTION: A pad oxide layer(110) and a pad nitride layer are sequentially formed on a semiconductor substrate(100). A trench is formed on a predetermined part of an isolation region by etching the pad nitride layer, the pad oxide layer, and the semiconductor substrate. A thermal oxide layer(140) is formed on a surface of the trench by performing an oxidation process. A liner nitride layer(150) and a liner oxide layer are formed on the entire surface of the semiconductor substrate. A gap-fill oxide layer is formed on the semiconductor substrate to bury the trench. The pad nitride layer is exposed by performing a planarization process. The pad nitride layer is polished by using slurries having different etch ratios. The remaining pad nitride is removed by performing a cleaning process.
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