| 摘要 |
PURPOSE: A method for manufacturing a CMOS image sensor is provided to reduce dark current by using a spacer etch buffer nitride layer for protecting the surface of a photodiode. CONSTITUTION: A field oxide layer(32) is formed on an epitaxial layer(31) to define an active region and a field region. Gates(33a,33b) are formed on the active region. An oxide layer(35) is formed on the epitaxial layer between the field oxide layer and the gates. A buried doping region(37) for a photodiode is formed in the epitaxial layer. A spacer etch buffer nitride layer(39) is formed on the resultant structure. Then, a spacer(41) is formed at both sidewalls of the gates. The residual buffer nitride layer on the photodiode is removed.
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