发明名称 |
METHOD FOR IMPROVING UNIFORMITY OF INTERLAYER DIELECTRIC USING DUMMY POLY |
摘要 |
PURPOSE: A method is provided to improve global uniformity of an interlayer dielectric by using a dummy poly formed in a field region. CONSTITUTION: A semiconductor substrate defined by a field region(100) and an active region(104) is prepared. A dummy poly pattern(102) is formed in the field region corresponding to the density of a poly pattern in the active region. The width of the dummy poly pattern is a minimum gate length.
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申请公布号 |
KR20040059374(A) |
申请公布日期 |
2004.07.05 |
申请号 |
KR20020085989 |
申请日期 |
2002.12.28 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, BONG CHEON |
分类号 |
H01L21/3105;(IPC1-7):H01L21/310 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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