发明名称 METHOD FOR IMPROVING UNIFORMITY OF INTERLAYER DIELECTRIC USING DUMMY POLY
摘要 PURPOSE: A method is provided to improve global uniformity of an interlayer dielectric by using a dummy poly formed in a field region. CONSTITUTION: A semiconductor substrate defined by a field region(100) and an active region(104) is prepared. A dummy poly pattern(102) is formed in the field region corresponding to the density of a poly pattern in the active region. The width of the dummy poly pattern is a minimum gate length.
申请公布号 KR20040059374(A) 申请公布日期 2004.07.05
申请号 KR20020085989 申请日期 2002.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, BONG CHEON
分类号 H01L21/3105;(IPC1-7):H01L21/310 主分类号 H01L21/3105
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