| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to restrict a failure of a self-aligned contact process and improve an electrical characteristic by preventing a bridge between a storage node contact and a word line. CONSTITUTION: A word line pattern having a hard mask(35) is formed on a semiconductor substrate(31). A landing plug(39) is formed on the semiconductor substrate between the word line patterns. An etch barrier(40) is formed on the semiconductor substrate including the landing plug. A top part of the landing plug is opened by etching the etch barrier. A plurality of interlayer dielectrics(47) are formed on the etch barrier including the top part of the landing plug. A storage node contact part is formed by etching the interlayer dielectrics. A storage node contact(49) is buried into the storage node contact part.
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