| 摘要 |
PURPOSE: A method for forming a source/drain structure of a semiconductor device is provided to omit high-energy ion implantation and high-temperature process by forming a source/drain junction before forming a gate. CONSTITUTION: A well(100) is formed in a semiconductor substrate. A source/drain pattern(104) is previously formed by depositing and patterning a polysilicon layer. A field oxide layer(108) is formed to define an active and field region. A polysilicon spacer is formed at both sidewalls of the source/drain pattern. An LDD(Lightly Doped Drain) spacer(112) is then formed. Then, a gate oxide layer and a gate polysilicon layer(116) are sequentially formed on the resultant structure.
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