| 摘要 |
PURPOSE: A method for forming a metal line of a semiconductor device is provided to prevent a dishing phenomenon and an erosion phenomenon due to a CMP process by forming the metal line without the CMP process. CONSTITUTION: A metal barrier layer(203) and a metal seed layer(204) are formed on a semiconductor substrate(201). Photoresist patterns including a metal line region are formed on the metal seed layer. A gap between the photoresist patterns is buried by a metal plating layer(206). The photoresist patterns are removed therefrom. The exposed metal seed layer is removed. The exposed metal barrier layer is removed. An insulating layer is formed on the entire surface of the semiconductor substrate including the metal line.
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