METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to form a salicide layer on a gate electrode alone by masking an oxide layer of a non-salicide region using a photoresist pattern in a PAI(Pre-Amorphization Implant) process. CONSTITUTION: A polycrystalline silicon pattern as a gate electrode(15) is formed on a semiconductor substrate(10) of a salicide region. An insulating spacer(17) is formed at both sidewalls of the gate electrode. An oxide layer(19) is deposited on the resultant structure. A photoresist pattern(21) is formed on the oxide layer of a non-salicide region. The gate electrode is exposed by etching the oxide layer of the salicide region using the photoresist pattern as an etching mask. An ion-implantation process for amorphizing the polycrystalline silicon pattern of the gate electrode is performed on the resultant structure by using As ions. The photoresist pattern is removed therefrom. The substrate is cleaned. At this time, the oxide layer of the non-salicide region is conserved. A metal film is deposited on the resultant structure. A salicide layer is formed on the gate electrode of the salicide region.