| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to increase the capacitance and to prevent bowing by additionally forming a sub capacitor at lower of a main capacitor. CONSTITUTION: A bit line(11) with a hard mask(12) and a spacer(13) is formed on a cell region(R1) of a substrate(10). An interlayer dielectric(14) with a contact hole is formed on the resultant structure. A storage node contact(16) is formed in the contact hole. The interlayer dielectric on the bit line is selectively etched. The first dielectric film(17) and the first plate electrode(18) are formed on the exposed bit line, thereby forming a sub capacitor(C1) on the cell region. A nitride pattern(19) is formed to expose the storage node contact. A nitride spacer(20) is formed at both sidewalls of the nitride pattern. A capacitor oxide layer(21) is formed on the resultant structure. A capacitor hole is formed to expose the storage node contact. A storage node electrode(22) is formed on the storage node contact. The second dielectric(23) and the second plate electrode(24) are formed on the storage node electrode, thereby forming a main capacitor(C2).
|
