METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to restrict a failure of a self-aligned contact process and improve an electrical characteristic by preventing a bridge between a storage node contact and a bit line. CONSTITUTION: A landing plug(35) connected to a semiconductor substrate(31) through a first interlayer dielectric(33) is formed on the semiconductor substrate. A second interlayer dielectric(36) is formed on the first interlayer dielectric including the landing plug. A bit line pattern(38) including a capping layer(39) and a spacer(40) is formed on a selected region of the second interlayer dielectric. A third interlayer dielectric(41) and an etch barrier layer(42) are formed on the bit line pattern. A first aperture(43a) of a storage node contact part(43) is formed by etching the etch barrier layer and the third interlayer dielectric. An insulating spacer(44) is formed on a sidewall of the first aperture. A second aperture(43b) of the storage node contact part is formed by etching the first interlayer dielectric. A storage node contact is buried into the storage node contact part.