METHOD FOR MANUFACTURING CAPACITOR USING HAFNIUM

摘要

PURPOSE: A method for manufacturing a capacitor using a hafnium oxide as a dielectric film is provided to shorten process time by forming the hafnium oxide using PECVD and LPCVD. CONSTITUTION: A lower electrode(12) is formed on a semiconductor substrate(11). The lower electrode is annealed. The first HfO2 dielectric film(13) is formed on the lower electrode by PECVD(Plasma Enhanced Chemical Vapor Deposition). The second HfO2 dielectric film(14) is formed on the first HfO2 dielectric film by LPCVD(Low Pressure CVD). The first and second HfO2 dielectric film are annealed. Then, an upper electrode is formed on the second HfO2 dielectric film.