| 摘要 |
PURPOSE: A method for forming a trench isolation layer of a semiconductor device is provided to improve reliability and yield by forming a liner nitride layer using decoupled plasma. CONSTITUTION: A trench mask pattern including a pad oxide pattern(21) and a pad nitride pattern(22) is formed on a silicon substrate(20) to expose an isolation region. A trench is formed by selectively etching the substrate using the trench mask pattern. A sidewall oxide layer(23) is formed on the trench. A liner nitride layer(23a) is formed by nitridation the surface of the sidewall oxide layer using decoupled plasma. Then, an insulating layer is filled in the trench.
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