| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to enhance the capacitance and to reduce the leakage current by using a double dielectric film. CONSTITUTION: A lower electrode(13) is formed on a semiconductor substrate(10) with a plug(12). An alumina(Al2O3) thin film(14A) as the first dielectric film is formed on the lower electrode. A titanium oxide(TiO2) layer(14B) as the second dielectric film is formed on the first dielectric film. Then, an upper electrode is formed on the double dielectric film.
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