| 摘要 |
PURPOSE: A method for manufacturing a CMOS image sensor is provided to restrain channeling, to simplify process and to improve cross-talk and dark current by using an in-situ doped polysilicon layer instead of channel stop ion-implantation. CONSTITUTION: A lightly doped epitaxial layer(22) is formed on a heavily doped substrate(21). A trench with the first width is formed in the epitaxial layer. An in-situ doped polysilicon layer(26) is formed on the trench. Then, an HDP oxide layer(27) is filled in the trench. A gate electrode(30) of a transfer transistor is formed on the epitaxial layer. Doping regions(31,33) for a photodiode are formed in the epitaxial layer between the gate electrode and the trench.
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