METHOD FOR MANUFACTURING RF ANALOG DEVICE USING MIM CAPACITOR OF INVERSE STRUCTURE

摘要

PURPOSE: A method for manufacturing an RF analog device is provided to simplify process and to reduce chip size by simultaneously forming an MIM capacitor and an inductor. CONSTITUTION: Via holes are formed by selectively etching an IMD(Inter-Metal Dielectric)(11). A via contact layer(12) is formed in the via holes. A lower electrode(13a) and a dielectric film(14a) are sequentially formed on the resultant structure. A spacer(16a) is formed at both sidewalls of the dielectric film and the lower electrode. A metal film and a hard mask(18a) are sequentially formed on the resultant structure. An inductor(17a) used as an upper electrode is formed by selectively etching the metal film using the hard mask as a mask.