| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve gap-fill margin and to reduce a storage node junction area by reducing the CD(Critical Dimension) of major axis of an isolation mask. CONSTITUTION: An isolation layer(31) is formed to reduce the active area of a storage node junction by using an isolation mask with reduced major axis CD. A channel implanted region is formed by implanting channel ions. A gate electrode(33) and a nitride capping layer(34) are sequentially formed on the resultant structure. An LDD(Lightly Doped Drain) region(35) is formed in the substrate. A spacer(36) is formed at both sidewalls of the gate electrode. The exposed isolation layer on the storage node junction is over-etched. Then, a source/drain region and a plug ion implanted region are formed. Then, a landing plug(38) is formed on the over-etched region.
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