| 摘要 |
PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to obtain the capacitance of two units by forming an MIM(Metal- Insulator-Metal) capacitor using local interconnection metal. CONSTITUTION: Poly gates(22) and a source/drain region(23) are formed on a substrate(21) with a logic part and a SRAM part. The first interlayer dielectric(25) with contact plugs(26) connected to the gate and the source/drain region is formed on the resultant structure. By depositing local interconnection metal on the first interlayer dielectric and patterning, the first lower electrode(27a) and a local interconnection metal film(27b) are formed on the logic and SRAM part, respectively. The second interlayer dielectric(28) with the second contact plug is formed. The second lower electrode(30) is connected to the source/drain region through the second contact plug. The first and second dielectric film(29,31), and the first and second upper electrode(32a,32b) are formed on the first and second lower electrode.
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