| 摘要 |
PURPOSE: A method for forming a copper interconnection of a semiconductor device is provided to restrain the EM(ElectroMigration) and SM(Stress Migration) of copper ions by forming an amorphous hydrogen silicon carbide(a-Si1-xC:H) layer on the copper interconnection. CONSTITUTION: A lower insulating layer(12) and a polish stop layer(13) are formed on a silicon substrate(11). A trench is formed by patterning the lower insulating layer and the polish stop layer. A diffusion barrier metal film(14) is formed on the trench and a copper interconnection(15) is filled in the trench. The first carbon-rich a-Si1-xC:H layer(16a) is formed on the copper interconnection. A diffusion barrier metal carbide film(17) is formed at interface between the a-Si1-xC:H layer and the diffusion barrier metal film. The second a-Si1-xC:H layer(16b) is formed on the first a-Si1-xC:H layer. Then, an upper insulating layer(18) is formed on the second a-Si1-xC:H layer.
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