| 摘要 |
PURPOSE: A method for forming a trench isolation layer of a semiconductor device is provided to prevent the generation of etch residues by improving the moat profile. CONSTITUTION: A trench mask pattern including a pad oxide pattern(21) and a pad nitride pattern(22) is formed on a silicon substrate(20) to expose an isolation region. A trench is formed by selectively etching the substrate using the trench mask pattern. A liner nitride layer is formed on the trench by nitridation the surface of the silicon substrate. Then, an HDP oxide layer is filled in the trench.
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