发明名称 INTERLEAVER CONTROL DEVICE USING NONVOLATILE FERROELECTRIC MEMORY
摘要 PURPOSE: An interleaver control device using a nonvolatile ferroelectric memory is provided to reduce a system access latency time by a row access time and a restore time by performing an interleaver program using the nonvolatile ferroelectric memory chip. CONSTITUTION: A single chip FRAM array comprises a plurality of single banks. A memory interleaver control part(40) programs a code for memory interleaver control, and changes an address path of the single chip FRAM array according to a programmed code. A bus exchanges mutual data between the single chip FRAM array and the memory interleaver control part.
申请公布号 KR20040059009(A) 申请公布日期 2004.07.05
申请号 KR20020085533 申请日期 2002.12.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KANG, HUI BOK
分类号 G11C11/22;G11C7/10;(IPC1-7):G11C11/22 主分类号 G11C11/22
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