| 摘要 |
PURPOSE: A unit pixel of a CMOS image sensor and a fabricating method thereof are provided to reduce the leakage current by forming a p-type ion implantation region of high density under a floating diffusion region. CONSTITUTION: A conductive type epitaxial layer(21) of low density is formed on a conductive type substrate(20) of high density. A transfer transistor(23) is formed on the conductive type epitaxial layer. A doping region for photodiode is formed on one side of the transfer transistor. A floating diffusion region(29) is formed on the other side of the transfer transistor. A conductive type ion implantation region(28) is formed on the conductive type epitaxial layer under the floating diffusion region.
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