发明名称 METHOD FOR MANUFACTURING CMOS IMAGE SENSOR FOR PREVENTING PEELING OF OVER COATING LAYER
摘要 PURPOSE: A method for manufacturing a CMOS image sensor is provided to prevent peeling of an OCL(Over Coating Layer) by using silylation processing. CONSTITUTION: A CFA(Color Filter Array)(26) is formed on a substrate(20) with a photodiode(22). An OCL(Over Coating Layer)(27) as a planarization layer is formed on the CFA. A silicon layer(28) is formed on the OCL by silylation processing using HMCTS(Hexa Methyl Cyclo Tri Silazane) or HMDS(Hexa Methyl Di Silazane).
申请公布号 KR20040058700(A) 申请公布日期 2004.07.05
申请号 KR20020085077 申请日期 2002.12.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHOI, SEON HO;SHIN, DAE UNG
分类号 H01L27/14;(IPC1-7):H01L27/14 主分类号 H01L27/14
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