| 摘要 |
The invention achieves the fine processing of an information writing device, which includes a multilayered element obtained by stacking ferromagnetic/semiconductor/ferromagnetic layers, without increasing the resistivity and power consumption of the device and lowering the reliability thereof. The invention provides an information storage apparatus (1) having write word lines (11), bit lines (21) formed in such a way as to intersect with the write word lines (11) at predetermined intervals, and information storage devices (31) each comprising a multilayered film including a magnetic layer provided in an intersection region, in which each of the write word lines (11) intersects with an associated one of the bit lines (21), between the write word lines (11) and the bit lines (21). The information storage devices (31) each have a concave portion (54), which is provided in a second insulating film (53) formed between the write word line (11) and the bit line (21) in the intersection region between the word line (11) and the bit line (21), and a multilayered film including at least a magnetic layer formed in the concave portion (54).
|
