METHOD FOR MANUFACTURING CAPACITOR WITH STACKED DIELECTRIC FILM OF ALUMINA AND HAFNIUM OXIDE

摘要

PURPOSE: A method for manufacturing a capacitor with a stacked dielectric film of an alumina film and a hafnium oxide layer is provided to prevent oxidation of a lower electrode by reforming an aluminum film to the alumina. CONSTITUTION: A lower electrode(21) made of a polysilicon layer is prepared. An aluminum film is formed on the lower electrode. A hafnium oxide layer(23) is formed on the aluminum film. By sequentially performing plasma treatment of low-temperature and annealing of high-temperature, the aluminum film is reformed to an alumina(22a). Then, an upper electrode is formed on the hafnium oxide layer.