METHOD FOR FORMING SHALLOW TRENCH ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an STI(Shallow Trench Isolation) layer of a semiconductor device is provided to prevent dishing and to improve process margin by adding a polish agent with positive zeta potential to a slurry. CONSTITUTION: A pad nitride layer(102) is formed on a semiconductor substrate(100). A shallow trench(104) is formed. An oxide layer is filled in the shallow trench. The oxide layer is polished by CMP(Chemical Mechanical Polishing) using a slurry added in a polish agent(108) with positive zeta potential. The remaining pad nitride layer is removed.