METHOD FOR FORMING STORAGE NODE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a storage node electrode of a semiconductor device is provided to prevent spherical defects by using DFVP(Development Free Vapor Photolithography). CONSTITUTION: A semiconductor substrate(100) defined by a cell region(III) and a peripheral region(IV) is prepared. A sacrificial layer(102) having a storage node contact(103a) and a groove(103b) is formed on the substrate. A polysilicon layer and a photoresist layer are sequentially formed on the resultant structure. A storage node electrode and a guard ring(104) are formed by etching the photoresist layer and the polysilicon layer. A mask pattern(120) is formed to expose the cell region and to cover the guard ring and the peripheral region. The sacrificial layer of the cell region is etched by using the mask pattern and using DFVP.