GaN SYSTEM SEMICONDUCTOR DEVICE EQUIPPED WITH CURRENT BREAKER

摘要

PROBLEM TO BE SOLVED: To provide a GaN group semiconductor device capable of previously preventing the flow of an abnormal current into a circuit and immediately and automatically restoring a current state as a semiconductor device for a high output microwave switching device. SOLUTION: In the GaN group semiconductor device with a current breaker, a hetero electric field junction transistor 10A and a polymer switch 10B which are GaN group semiconductor materials are formed on the same substrate and the polymer switch 10B having a recovery function is connected to the hetero electric field effect transistor 10A in series. COPYRIGHT: (C)2004,JPO&NCIPI