| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with an excellent reverse recovery characteristic. SOLUTION: The device is provided with a base layer having a first main surface and a second main surface opposing the first main surface and consisting of a first conductive type semiconductor, a first main electrode layer connected to the base layer on the first main surface, a control area which extends through the first main electrode layer and which is arranged inside of a groove reaching the inside of the base layer, and a second main electrode layer connected to the base layer on the second main surface and consisting of the first conductive type semiconductor. COPYRIGHT: (C)2004,JPO&NCIPI
|
