| 摘要 |
PURPOSE: A method for forming a trench of a semiconductor device is provided to be capable of reducing micro-loading effect and improving uniformity of the trench depth. CONSTITUTION: The first ion-implanted layer(130) is formed in a desired region of a silicon substrate(100). The second ion-implanted layer(135) with a relatively wide area compared to the first ion-implanted layer is formed on the upper portion of the first ion-implanted layer. A trench is formed by etching the substrate of the first and second ion-implanted layer using a pad oxide pattern(140) and a pad nitride pattern(160) as a mask.
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