SEMICONDUCTOR DEVICE WITH RUTHENIUM PLUG AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device with a ruthenium plug and a method for manufacturing the same are provided to be capable of preventing fail of SAC(Self-Aligned Contact) and reducing contact resistance of a storage node contact plug. CONSTITUTION: A first interlayer dielectric(32) with a landing plug(33) is formed on a semiconductor substrate(31). A second interlayer dielectric(34) is formed on the resultant structure. Bit lines(35) are formed on the second insulating layer. A storage node contact hole is formed to expose the landing plug by selectively etching the second interlayer dielectric between the bit lines. A barrier metal film(38) and a ruthenium plug(39a) are filled in the contact hole. A lower electrode(44) is formed to connect the ruthenium plug.