| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to enhance capacitance and to improve topology by increasing the area of a storage node contact hole using cleaning. CONSTITUTION: A semiconductor substrate(100) with a gate electrode(108) is prepared. At least two stacked insulating layers(118,120,122,124) with different etching selectivity are formed on the resultant structure. Two storage node contact holes are formed by selectively etching the insulating layers. By cleaning the exposed insulating layers, the inner sidewall with a plurality of bellows shape is formed so as to increase the area of the storage node contact holes. A lower electrode(128), a dielectric film(130) and an upper electrode(132) are sequentially formed on the storage node contact holes.
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